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THE PREPARATION AND THE PROPERTIES OF SEMI-INSULATING GAAS EPITAXIAL LAYER BY IRON DOPING.DAZAI K; SHIBATOMI A; NAKAI K et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 2; PP. 179A189; BIBL. 15 REF.Article

SURFACE ANALYSIS OF GAAS MESFETS BY GM FREQUENCY-DISPERSION MEASUREMENT OF TRANSCONDUCTANCEOZEKI M; KODAMA K; SHIBATOMI A et al.1982; FUJITSU SCIENTIFIC AND TECHNICAL JOURNAL; ISSN 0016-2523; JPN; DA. 1982; VOL. 18; NO 4; PP. 475-486; BIBL. 6 REF.Article

BREAKDOWN MECHANISM OF BUFFER LAYERS IN VAPOR PHASE EPITAXIAL GAAS FOR METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORSKODAMA K; OZEKI M; SHIBATOMI A et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 3; PP. 249-250; BIBL. 4 REF.Article

GROWTH OF GAAS MULTIPLE LAYER EPITAXIAL BY V.P.E. METHOD.OGASAWARA K; SHIBATOMI A; DAZAI K et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 3; PP. 97-105; BIBL. 9 REF.Article

THE PREPARATION AND THE PROPERTIES OF SEMI-INSULATING GAAS EPITAXIAL LAYER BY IRON DOPING.DAZAI K; SHIBATOMI A; NAKAI K et al.1976; FUJITSU SCI. TECH. J.; JAP.; DA. 1976; VOL. 12; NO 2; PP. 179-189; BIBL. 1 P.Article

GROWTH OF GAAS VPE LAYERS WITH HIGH THICKNESS UNIFORMITYNOGAMI M; KOMENO J; SHIBATOMI A et al.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 3; PP. 637-639; BIBL. 14 REF.Article

ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF CR-DOPED SEMI-INSULATING GAASKITAHARA K; NAKAI K; SHIBATOMI A et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 8; PP. 5339-5344; BIBL. 21 REF.Article

GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD EFFECT TRANSISTORS.NAKAI K; KITAHARA K; SHIBATOMI A et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 10; PP. 1635-1640; BIBL. 27 REF.Article

A NEW ANODIC ETCH FOR THE OBSERVATION OF DISLOCATIONS IN N-GAASNAGATA K; KOMIYA S; SHIBATOMI A et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 10; PP. 2247-2250; BIBL. 14 REF.Article

CURRENT-VOLTAGE CHARACTERISTICS AND DEEP LEVELS IN CHROMIUM-DOPED SEMI-INSULATING GAAS.KITAHARA K; NAKAI K; SHIBATOMI A et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 4; PP. 259-260; BIBL. 10 REF.Article

ORIENTATION EFFECT OF SELF-ALIGNED SOURCE/DRAIN PLANAR GAAS SCHOTTKY BARRIER FIELD-EFFECT TRANSISTORSYOKOYAMA N; ONODERA H; OHNISHI T et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 270-271; BIBL. 5 REF.Article

INFLUENCE OF CARBON AND OXYGEN ON DONOR FORMATION AT 100OC IN CZOCHRALSKI GROWN SILICONOHSAWA A; TAKIZAWA R; HONDA K et al.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5733-5737; BIBL. 22 REF.Article

Influence of MBE growth conditions on persistent photoconductivity effects in N-AlGaAs and selectively doped GaAs/AlGaAs heterostructuresISHIKAWA, T; KONDO, K; HIYAMIZU, S et al.Japanese journal of applied physics. 1985, Vol 24, Num 6, pp L408-L410, issn 0021-4922Article

Transient analysis of resonant tunneling hot electron transistor (RHET)OHNISHI, H; YOKOYAMA, N; SHIBATOMI, A et al.Solid-state electronics. 1989, Vol 32, Num 12, pp 1905-1909, issn 0038-1101Conference Paper

Characterization of WSiX/GaAs Schottky contactsOHNISHI, T; YOKOYAMA, N; ONODERA, H et al.Applied physics letters. 1983, Vol 43, Num 6, pp 600-602, issn 0003-6951Article

Classification of surface defects on GaAs grown by molecular beam epitaxyNANBU, K; SAITO, J; ISHIKAWA, T et al.Journal of the Electrochemical Society. 1986, Vol 133, Num 3, pp 601-604, issn 0013-4651Article

Self-consistent analysis of resonant tunneling currentOHNISHI, H; INATA, T; MUTO, S et al.Applied physics letters. 1986, Vol 49, Num 19, pp 1248-1250, issn 0003-6951Article

Quasi-one-dimensional channel GaAs/AlGaAs modulation doped FET using a corrugated gate structureOKADA, M; OHSHIMA, T; MATSUDA, M et al.Japanese journal of applied physics. 1988, Vol 27, Num 12, pp L2424-L2426, issn 0021-4922, 2Article

Recent advances in ultra-high-speed HEMT technologyABE, M; MIMURA, T; NISHIUCHI, K et al.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1870-1879, issn 0018-9197Article

High-transconductance self aligned GaAs MESFET using implantation through an AIN layerONODERA, H; YOKOYAMA, N; KAWATA, H et al.Electronics Letters. 1984, Vol 20, Num 1, pp 45-47, issn 0013-5194Article

Resonant tunneling bipolar transistor using InAlAl/InGaAs heterostructuresTUTATSUGI, T; YAMAGUCHI, Y; MUTO, S et al.Journal of applied physics. 1989, Vol 65, Num 4, pp 1771-1775, issn 0021-8979, 5 p.Article

Effect of thermal etching on GaAs substrate in molecular beam epitaxySAITO, J; ISHIKAWA, T; NAKAMURA, T et al.Japanese journal of applied physics. 1986, Vol 25, Num 8, pp 1216-1220, issn 0021-4922, 1Article

InGaAs/InAlGaAs hot-electron transitors with current gain of 15IMAMURA, K; MUTO, S; FUJII, T et al.Electronics Letters. 1986, Vol 22, Num 21, pp 1148-1150, issn 0013-5194Article

InGaAs/InAlGaAs hot-electron transitors with current gain of 15IMAMURA, K; MUTO, S; FUJII, T et al.Electronics Letters. 1986, Vol 22, Num 21, pp 1148-1150, issn 0013-5194Article

A resonant-tunneling bipolar transistor (RBT)―a new functional device with high current gainFUTATSUGI, T; YAMAGUCHI, Y; IMAMURA, K et al.Japanese journal of applied physics. 1987, Vol 26, Num 2, pp L131-L133, issn 0021-4922, 2Article

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